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FKV550N

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The FKV550N from Sanken Electric is a MOSFET with Continous Drain Current 50 A, Drain Source Resistance 12 to 15 milli-ohm, Drain Source Breakdown Voltage 50 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3 to 4.2 V. Tags: Through Hole. More details for FKV550N can be seen below.

Product Specifications

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Product Details

  • Part Number
    FKV550N
  • Manufacturer
    Sanken Electric
  • Description
    50 V, 50 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    50 A
  • Drain Source Resistance
    12 to 15 milli-ohm
  • Drain Source Breakdown Voltage
    50 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 to 4.2 V
  • Switching Speed
    30 to 360 ns
  • Power Dissipation
    35 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO220F-3L
  • Applications
    DC-DC Converters, Syncronous Rectification
  • Note
    Input Capacitance :- 2000 pF, Weight :- 2 g

Technical Documents
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