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GCMX005A170S3B1-N

MOSFET by SemiQ (12 more products)
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The GCMX005A170S3B1-N from SemiQ is a MOSFET with Continous Drain Current 344 to 397 A, Drain Source Resistance 5.1 to 10.6 milli-ohm, Drain Source Breakdown Voltage 1700 V, Gate Source Voltage -10 to 25 V, Gate Source Threshold Voltage 1.8 to 4 V. Tags: Module. More details for GCMX005A170S3B1-N can be seen below.

Product Specifications

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Product Details

  • Part Number
    GCMX005A170S3B1-N
  • Manufacturer
    SemiQ
  • Description
    -10 to 25 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    344 to 397 A
  • Drain Source Resistance
    5.1 to 10.6 milli-ohm
  • Drain Source Breakdown Voltage
    1700 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    1.8 to 4 V
  • Gate Charge
    1416 nC
  • Power Dissipation
    2113 W
  • Temperature operating range
    -40 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Module
  • Package
    S3
  • Applications
    Photovoltaic and Wind Inverter, EV/Battery charger, Energy storage system, High voltage DC to DC converter, Induction Heating, SMPS and UPS

Technical Documents
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