The GP2T040A120H from SemiQ is a SiC MOSFET that is ideal for power factor correction, DC-DC converter primary switching, and synchronous rectification. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 2.4 V, and a drain-source on-resistance of less than 35 mΩ. This REACH-qualified MOSFET has a continuous drain current of up to 63 A and power dissipation of less than 322 W. This SiC MOSFET offers high-speed switching and a driver source pin for gate driving. This MOSFET provides lower capacitance, higher system efficiency, lower switching loss, and longer creepage distance. It is available in a through-hole package that measures 16.13 x 23.60 x 5.21 mm and is ideal for solar inverters, switch mode power supplies, UPS, induction heating, and welding, EV charging stations, high voltage DC/DC converters, motor drives applications.