SHD225515

Note : Your request will be directed to Sensitron Semiconductor.

The SHD225515 from Sensitron Semiconductor is a MOSFET with Continous Drain Current 10 to 16 A, Drain Source Resistance 0.40 ohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for SHD225515 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SHD225515
  • Manufacturer
    Sensitron Semiconductor
  • Description
    600 V, 10 to 16 A, N-Channel Enhancement Mode HERMETIC MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 to 16 A
  • Drain Source Resistance
    0.40 ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    210 nC
  • Switching Speed
    19 to 110 ns
  • Power Dissipation
    125 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-254
  • Note
    Input Capacitance :- 3900 pF

Technical Documents

Latest MOSFETs

View more products