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SHD225617

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The SHD225617 from Sensitron Semiconductor is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 1.2 ohm, Drain Source Breakdown Voltage 1000 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.5 V. Tags: Through Hole. More details for SHD225617 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SHD225617
  • Manufacturer
    Sensitron Semiconductor
  • Description
    1000 V, 10 A, N-Channel Enhancement Mode HERMETIC MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 A
  • Drain Source Resistance
    1.2 ohm
  • Drain Source Breakdown Voltage
    1000 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.5 V
  • Switching Speed
    21 to 63 ns
  • Power Dissipation
    350 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-254
  • Note
    Input Capacitance :- 4000 pF

Technical Documents
View details on the manufacturer's website
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