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P1FE90VX3

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P1FE90VX3 Image

The P1FE90VX3 from Shindengen America is a MOSFET with Continous Drain Current 1 A, Drain Source Resistance 9500 to 14000 milliohm, Drain Source Breakdown Voltage 900 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Surface Mount. More details for P1FE90VX3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    P1FE90VX3
  • Manufacturer
    Shindengen America
  • Description
    900 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1 A
  • Drain Source Resistance
    9500 to 14000 milliohm
  • Drain Source Breakdown Voltage
    900 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 4 V
  • Gate Charge
    10.8 nC
  • Power Dissipation
    36 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252AB similar
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