P33LF6QLKD

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The P33LF6QLKD from Shindengen America is a MOSFET with Continous Drain Current 33 A, Drain Source Resistance 10.5 to 16.9 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Surface Mount. More details for P33LF6QLKD can be seen below.

Product Specifications

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Product Details

  • Part Number
    P33LF6QLKD
  • Manufacturer
    Shindengen America
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    33 A
  • Drain Source Resistance
    10.5 to 16.9 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 2.5 V
  • Gate Charge
    37 nC
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount

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