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P39LF6QTKD

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The P39LF6QTKD from Shindengen America is a MOSFET with Continous Drain Current 39 A, Drain Source Resistance 8.3 to 14.8 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Surface Mount. More details for P39LF6QTKD can be seen below.

Product Specifications

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Product Details

  • Part Number
    P39LF6QTKD
  • Manufacturer
    Shindengen America
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    39 A
  • Drain Source Resistance
    8.3 to 14.8 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 2.5 V
  • Gate Charge
    35 nC
  • Power Dissipation
    62 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
View details on the manufacturer's website
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