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STB11NM80

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STB11NM80 Image

The STB11NM80 from STMicroelectronics is a MOSFET with Continous Drain Current 11 A, Drain Source Resistance 35 to 40 Milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for STB11NM80 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STB11NM80
  • Manufacturer
    STMicroelectronics
  • Description
    -30 to 30 V, 43.6 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11 A
  • Drain Source Resistance
    35 to 40 Milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    43.6 nC
  • Power Dissipation
    150 W
  • Temperature operating range
    -65 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    Switching applications

Technical Documents
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