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STB200NF03

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STB200NF03 Image

The STB200NF03 from STMicroelectronics is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 0.0032 to 0.0036 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for STB200NF03 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STB200NF03
  • Manufacturer
    STMicroelectronics
  • Description
    20 V, Single, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    0.0032 to 0.0036 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    113 to 140 nC
  • Power Dissipation
    300 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Through Hole
  • Package
    D2PAK
  • Applications
    Switching application

Technical Documents
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