The STB20N95K5 from STMicroelectronics is an N-Channel Enhancement Mode Power MOSFET. It has a drain-source breakdown voltage of over 950 V, a gate-source voltage of up to 30 V, and a drain-source on-resistance of 275 mΩ. This power MOSFET has a continuous drain current of up to 17.5 A and power dissipation of less than 250 W. It is designed using MDmesh K5 technology that is based on an innovative proprietary vertical structure, thereby resulting in a dramatic reduction in on-resistance and total gate charge for applications requiring superior power density and high efficiency.

This MOSFET is Zener-protected and offers the industry’s best Figure of Merit (FoM). It is available in a surface-mount package that measures 10 x 15 mm and is ideal for switching applications.