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STB41N40DM6AG

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STB41N40DM6AG Image

The STB41N40DM6AG from STMicroelectronics is a MOSFET with Continous Drain Current 41 A, Drain Source Resistance 50 to 65 Milliohm, Drain Source Breakdown Voltage 400 V, Gate Source Voltage - 25 to 25 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for STB41N40DM6AG can be seen below.

Product Specifications

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Product Details

  • Part Number
    STB41N40DM6AG
  • Manufacturer
    STMicroelectronics
  • Description
    - 25 to 25 V, 53 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    41 A
  • Drain Source Resistance
    50 to 65 Milliohm
  • Drain Source Breakdown Voltage
    400 V
  • Gate Source Voltage
    - 25 to 25 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    53 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    Switching applications

Technical Documents
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