The STB45N60DM2AG from STMicroelectronics is a MOSFET with Continous Drain Current 34 A, Drain Source Resistance 85 to 93 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage - 25 to 25 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for STB45N60DM2AG can be seen below.