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STB7NK80Z-1

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STB7NK80Z-1 Image

The STB7NK80Z-1 from STMicroelectronics is a MOSFET with Continous Drain Current 5.2 A, Drain Source Resistance 1500 to 1800 Milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 4.5 V. Tags: Through Hole. More details for STB7NK80Z-1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STB7NK80Z-1
  • Manufacturer
    STMicroelectronics
  • Description
    -30 to 30 V, 40 to 56 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.2 A
  • Drain Source Resistance
    1500 to 1800 Milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 4.5 V
  • Gate Charge
    40 to 56 nC
  • Power Dissipation
    125 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    I2PAK
  • Applications
    Switching applications

Technical Documents
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