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STB8NM60

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STB8NM60 Image

The STB8NM60 from STMicroelectronics is a MOSFET with Continous Drain Current 8 A, Drain Source Resistance 900 to 1000 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for STB8NM60 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STB8NM60
  • Manufacturer
    STMicroelectronics
  • Description
    -30 to 30 V, 18 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 A
  • Drain Source Resistance
    900 to 1000 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    18 nC
  • Power Dissipation
    100 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    Switching applications

Technical Documents
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