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STD1HN60K3

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STD1HN60K3 Image

The STD1HN60K3 from STMicroelectronics is a MOSFET with Continous Drain Current 1.2 A, Drain Source Resistance 6700 to 8000 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4.5 V. Tags: Surface Mount. More details for STD1HN60K3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STD1HN60K3
  • Manufacturer
    STMicroelectronics
  • Description
    -30 to 30 V, 9.5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.2 A
  • Drain Source Resistance
    6700 to 8000 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4.5 V
  • Gate Charge
    9.5 nC
  • Power Dissipation
    27 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Switching applications

Technical Documents
View details on the manufacturer's website
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