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STD2HNK60Z-1

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STD2HNK60Z-1 Image

The STD2HNK60Z-1 from STMicroelectronics is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 3500 to 4800 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 4.5 V. Tags: Through Hole. More details for STD2HNK60Z-1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STD2HNK60Z-1
  • Manufacturer
    STMicroelectronics
  • Description
    -30 to 30 V, 11 to 15 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    3500 to 4800 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 4.5 V
  • Gate Charge
    11 to 15 nC
  • Power Dissipation
    45 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    IPAK
  • Applications
    Switching applications

Technical Documents
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