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STD40P8F6AG

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STD40P8F6AG Image

The STD40P8F6AG from STMicroelectronics is a MOSFET with Continous Drain Current -40 A, Drain Source Resistance 18.5 to 28 Milliohm, Drain Source Breakdown Voltage -80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Surface Mount. More details for STD40P8F6AG can be seen below.

Product Specifications

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Product Details

  • Part Number
    STD40P8F6AG
  • Manufacturer
    STMicroelectronics
  • Description
    -20 to 20 V, 73 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -40 A
  • Drain Source Resistance
    18.5 to 28 Milliohm
  • Drain Source Breakdown Voltage
    -80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    73 nC
  • Power Dissipation
    100 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Switching applications

Technical Documents
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