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STD5N65M6

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STD5N65M6 Image

The STD5N65M6 from STMicroelectronics is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 1150 to 1300 Milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage - 25 to 25 V, Gate Source Threshold Voltage 2.25 to 3.75 V. Tags: Surface Mount. More details for STD5N65M6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STD5N65M6
  • Manufacturer
    STMicroelectronics
  • Description
    - 25 to 25 V, 5.1 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    1150 to 1300 Milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    - 25 to 25 V
  • Gate Source Threshold Voltage
    2.25 to 3.75 V
  • Gate Charge
    5.1 nC
  • Power Dissipation
    45 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Switching applications

Technical Documents
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