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STH260N6F6-2

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STH260N6F6-2 Image

The STH260N6F6-2 from STMicroelectronics is a MOSFET with Continous Drain Current 180 A, Drain Source Resistance 1.7 to 2.4 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for STH260N6F6-2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STH260N6F6-2
  • Manufacturer
    STMicroelectronics
  • Description
    -20 to 20 V, 183 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    180 A
  • Drain Source Resistance
    1.7 to 2.4 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    183 nC
  • Power Dissipation
    300 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Surface Mount
  • Package
    H2PAK-2
  • Applications
    Switching applications

Technical Documents
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