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STH410N4F7-2AG

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STH410N4F7-2AG Image

The STH410N4F7-2AG from STMicroelectronics is a MOSFET with Continous Drain Current 200 A, Drain Source Resistance 0.8 to 1.1 Milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Surface Mount. More details for STH410N4F7-2AG can be seen below.

Product Specifications

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Product Details

  • Part Number
    STH410N4F7-2AG
  • Manufacturer
    STMicroelectronics
  • Description
    -20 to 20 V, 141 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    200 A
  • Drain Source Resistance
    0.8 to 1.1 Milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    141 nC
  • Power Dissipation
    365 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    H2PAK-2
  • Applications
    Switching applications

Technical Documents
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