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STN1HNK60

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STN1HNK60 Image

The STN1HNK60 from STMicroelectronics is a MOSFET with Continous Drain Current 0.4 A, Drain Source Resistance 7300 to 8500 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.25 to 3.7 V. Tags: Surface Mount. More details for STN1HNK60 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STN1HNK60
  • Manufacturer
    STMicroelectronics
  • Description
    -30 to 30 V, 7 to 10 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.4 A
  • Drain Source Resistance
    7300 to 8500 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.25 to 3.7 V
  • Gate Charge
    7 to 10 nC
  • Power Dissipation
    3.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    SOT-223
  • Applications
    Switching applications

Technical Documents
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