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STP120NF10

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STP120NF10 Image

The STP120NF10 from STMicroelectronics is a MOSFET with Continous Drain Current 110 A, Drain Source Resistance 9 to 10.5 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for STP120NF10 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STP120NF10
  • Manufacturer
    STMicroelectronics
  • Description
    -20 to 20 V, 172 to 233 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    110 A
  • Drain Source Resistance
    9 to 10.5 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    172 to 233 nC
  • Power Dissipation
    312 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switching applications

Technical Documents
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