The STP12N60M2 from STMicroelectronics is a MOSFET with Continous Drain Current 9 A, Drain Source Resistance 395 to 450 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage - 25 to 25 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for STP12N60M2 can be seen below.