The STP19NM50N from STMicroelectronics is a MOSFET with Continous Drain Current 14 A, Drain Source Resistance 200 to 250 Milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage - 25 to 25 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for STP19NM50N can be seen below.