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STP35N60M2-EP

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STP35N60M2-EP Image

The STP35N60M2-EP from STMicroelectronics is a MOSFET with Continous Drain Current 26 A, Drain Source Resistance 110 to 130 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage - 25 to 25 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for STP35N60M2-EP can be seen below.

Product Specifications

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Product Details

  • Part Number
    STP35N60M2-EP
  • Manufacturer
    STMicroelectronics
  • Description
    - 25 to 25 V, 41 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    26 A
  • Drain Source Resistance
    110 to 130 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    - 25 to 25 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    41 nC
  • Power Dissipation
    190 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switching applications

Technical Documents
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