The STP60N043DM9 from STMicroelectronics is a N-Channel Silicon Power MOSFET that is designed for LLC resonant converter, power supplies & converter applications. It is developed using an innovative super-junction MDmesh DM9 technology. This technology is suitable for medium/high voltage MOSFETs which has a very low drain-source resistance per area coupled with a fast-recovery diode. It has a gate-source voltage of ± 30 V and a gate threshold voltage of up to 4.5 V. This MOSFET has a drain-source breakdown voltage of 600 V and a drain-source resistance of up to 43 mΩ. It has a power dissipation of 245 W and a continuous drain current of up to 56 A. This MOSFET consist of a fast-recovery diode that offer very low recovery charge, recovery time and drain-source resistance. This feature enables the MOSFET to be used for most demanding high-efficiency bridge topologies and ZVS phase-shift converters. It has low gate charge, input capacitance and resistance. This MOSFET is available as a through hole package.