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STP6NK60Z

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STP6NK60Z Image

The STP6NK60Z from STMicroelectronics is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 1000 to 1200 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 4.5 V. Tags: Through Hole. More details for STP6NK60Z can be seen below.

Product Specifications

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Product Details

  • Part Number
    STP6NK60Z
  • Manufacturer
    STMicroelectronics
  • Description
    -30 to 30 V, 33 to 46 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    1000 to 1200 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 4.5 V
  • Gate Charge
    33 to 46 nC
  • Power Dissipation
    110 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switching applications

Technical Documents
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