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STRH8N10

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STRH8N10 Image

The STRH8N10 from STMicroelectronics is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 72 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 5.5 V. Tags: Surface Mount. More details for STRH8N10 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STRH8N10
  • Manufacturer
    STMicroelectronics
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    72 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 5.5 V
  • Gate Charge
    22 nC
  • Power Dissipation
    62.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Surface Mount
  • Package
    SMD.5

Technical Documents
View details on the manufacturer's website
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