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STS8N6LF6AG

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STS8N6LF6AG Image

The STS8N6LF6AG from STMicroelectronics is a MOSFET with Continous Drain Current 8 A, Drain Source Resistance 1 to 26 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for STS8N6LF6AG can be seen below.

Product Specifications

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Product Details

  • Part Number
    STS8N6LF6AG
  • Manufacturer
    STMicroelectronics
  • Description
    -20 to 20 V, 27 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 A
  • Drain Source Resistance
    1 to 26 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    27 nC
  • Power Dissipation
    3.2 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Switching applications

Technical Documents
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