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STY60NM50

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STY60NM50 Image

The STY60NM50 from STMicroelectronics is a MOSFET with Continous Drain Current 60 A, Drain Source Resistance 45 to 50 Milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for STY60NM50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STY60NM50
  • Manufacturer
    STMicroelectronics
  • Description
    -30 to 30 V, 190 to 266 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    60 A
  • Drain Source Resistance
    45 to 50 Milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    190 to 266 nC
  • Power Dissipation
    560 W
  • Temperature operating range
    0 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    Max247
  • Applications
    Switching applications

Technical Documents
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