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BSS123W

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BSS123W Image

The BSS123W from Taiwan Semiconductor is a MOSFET with Continous Drain Current 0.16 A, Drain Source Resistance 3600 to 5500 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for BSS123W can be seen below.

Product Specifications

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Product Details

  • Part Number
    BSS123W
  • Manufacturer
    Taiwan Semiconductor
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.16 A
  • Drain Source Resistance
    3600 to 5500 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    1.1 to 2 nC
  • Power Dissipation
    0.06 to 0.298 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-323
  • Applications
    Low Side Load Switching, Level Shift Circuits, General Switch Circuits

Technical Documents
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