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TQM250NB06DCR

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TQM250NB06DCR Image

The TQM250NB06DCR from Taiwan Semiconductor is a MOSFET with Continous Drain Current 30 A, Drain Source Resistance 21 to 65 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.8 to 3.8 V. Tags: Surface Mount. More details for TQM250NB06DCR can be seen below.

Product Specifications

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Product Details

  • Part Number
    TQM250NB06DCR
  • Manufacturer
    Taiwan Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    30 A
  • Drain Source Resistance
    21 to 65 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.8 to 3.8 V
  • Gate Charge
    18 to 24 nC
  • Power Dissipation
    0.8 to 58 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Applications
    Automotive Systems, Solenoid and Motor Control, Automotive Transmission Contro, DC-DC Converters

Technical Documents
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