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TSM019NH04CR

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TSM019NH04CR Image

The TSM019NH04CR from Taiwan Semiconductor is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 1.3 to 2.3 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.4 to 3.6 V. Tags: Surface Mount. More details for TSM019NH04CR can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM019NH04CR
  • Manufacturer
    Taiwan Semiconductor
  • Description
    40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    1.3 to 2.3 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.4 to 3.6 V
  • Gate Charge
    64 to 89 nC
  • Power Dissipation
    50 to 150 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Applications
    DC-DC Converters, Solenoid and Motor Drivers, Load Switch

Technical Documents
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