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TSM048NB06LCR

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TSM048NB06LCR Image

The TSM048NB06LCR from Taiwan Semiconductor is a MOSFET with Continous Drain Current 107 A, Drain Source Resistance 4 to 6.8 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for TSM048NB06LCR can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM048NB06LCR
  • Manufacturer
    Taiwan Semiconductor
  • Description
    60 V, 52 to 105 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    107 A
  • Drain Source Resistance
    4 to 6.8 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    52 to 105 nC
  • Power Dissipation
    1 to 136 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN56
  • Applications
    BLDC Motor Control, Battery Power Management, DC-DC Converter, Secondary Synchronous Rectification

Technical Documents
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