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TSM076NH04LDCR

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TSM076NH04LDCR Image

The TSM076NH04LDCR from Taiwan Semiconductor is a MOSFET with Continous Drain Current 34 A, Drain Source Resistance 6.1 to 10.6 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage 1.4 to 2.2 V. Tags: Surface Mount. More details for TSM076NH04LDCR can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM076NH04LDCR
  • Manufacturer
    Taiwan Semiconductor
  • Description
    40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    34 A
  • Drain Source Resistance
    6.1 to 10.6 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    1.4 to 2.2 V
  • Gate Charge
    10.7 to 22.4 nC
  • Power Dissipation
    18.5 to 55.6 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Applications
    DC-DC Converters, Solenoid and Motor Drivers, Load Switch

Technical Documents
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