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TSM089N08LCR

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TSM089N08LCR Image

The TSM089N08LCR from Taiwan Semiconductor is a MOSFET with Continous Drain Current 67 A, Drain Source Resistance 6.4 to 11 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for TSM089N08LCR can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM089N08LCR
  • Manufacturer
    Taiwan Semiconductor
  • Description
    80 V, 45 to 90 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    67 A
  • Drain Source Resistance
    6.4 to 11 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    45 to 90 nC
  • Power Dissipation
    0.5 to 83 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN56
  • Applications
    BLDC Motor Control, Telecom power, Primary and Secondary Side Switch

Technical Documents
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