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TSM090N03ECP

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TSM090N03ECP Image

The TSM090N03ECP from Taiwan Semiconductor is a MOSFET with Continous Drain Current 50 A, Drain Source Resistance 7.5 to 14 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for TSM090N03ECP can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM090N03ECP
  • Manufacturer
    Taiwan Semiconductor
  • Description
    30 V, 7.7 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    50 A
  • Drain Source Resistance
    7.5 to 14 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    7.7 nC
  • Power Dissipation
    40 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252 (D-PAK)
  • Applications
    MB / VGA / Vcor, POL Applications, SMPS 2nd SR

Technical Documents
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