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TSM100N06CZ

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TSM100N06CZ Image

The TSM100N06CZ from Taiwan Semiconductor is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 5.7 to 6.7 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for TSM100N06CZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM100N06CZ
  • Manufacturer
    Taiwan Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    5.7 to 6.7 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    81 nC
  • Power Dissipation
    1.3 to 167 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220

Technical Documents
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