TSM150P03PQ33

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TSM150P03PQ33 Image

The TSM150P03PQ33 from Taiwan Semiconductor is a MOSFET with Continous Drain Current -36 A, Drain Source Resistance 13 to 30 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1.2 V. Tags: Surface Mount. More details for TSM150P03PQ33 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM150P03PQ33
  • Manufacturer
    Taiwan Semiconductor
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -36 A
  • Drain Source Resistance
    13 to 30 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1.2 V
  • Gate Charge
    14.3 to 29.3 nC
  • Power Dissipation
    0.5 to 27.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Applications
    DC-DC Converters, Battery Power Management, Oring FET/Load Switch

Technical Documents

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