TSM180N03CS

Note : Your request will be directed to Taiwan Semiconductor.

TSM180N03CS Image

The TSM180N03CS from Taiwan Semiconductor is a MOSFET with Continous Drain Current 9 A, Drain Source Resistance 16 to 28 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for TSM180N03CS can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    TSM180N03CS
  • Manufacturer
    Taiwan Semiconductor
  • Description
    30 V, 4.1 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9 A
  • Drain Source Resistance
    16 to 28 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    4.1 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP-8

Technical Documents

Latest MOSFETs

View more products