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TSM190N08CZ

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The TSM190N08CZ from Taiwan Semiconductor is a MOSFET with Continous Drain Current 190 A, Drain Source Resistance 3.4 to 4.2 milliohm, Drain Source Breakdown Voltage 75 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for TSM190N08CZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM190N08CZ
  • Manufacturer
    Taiwan Semiconductor
  • Description
    75 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    190 A
  • Drain Source Resistance
    3.4 to 4.2 milliohm
  • Drain Source Breakdown Voltage
    75 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    160 nC
  • Power Dissipation
    1.3 to 250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220

Technical Documents
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