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TSM2301ACX

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TSM2301ACX Image

The TSM2301ACX from Taiwan Semiconductor is a MOSFET with Continous Drain Current -2.8 A, Drain Source Resistance 90 to 190 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1 to -0.6 V. Tags: Surface Mount. More details for TSM2301ACX can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM2301ACX
  • Manufacturer
    Taiwan Semiconductor
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.8 A
  • Drain Source Resistance
    90 to 190 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1 to -0.6 V
  • Gate Charge
    7.5 nC
  • Power Dissipation
    0.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Telecom power, Consumer Electronics

Technical Documents
View details on the manufacturer's website
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