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TSM2306CX

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TSM2306CX Image

The TSM2306CX from Taiwan Semiconductor is a MOSFET with Continous Drain Current 3.5 A, Drain Source Resistance 46 to 94 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for TSM2306CX can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM2306CX
  • Manufacturer
    Taiwan Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.5 A
  • Drain Source Resistance
    46 to 94 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    4.2 to 7 nC
  • Power Dissipation
    0.8 to 1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Load Switch, PA Switch

Technical Documents
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