The TSM2309CX from Taiwan Semiconductor is a MOSFET with Continous Drain Current -3.1 A, Drain Source Resistance 160 to 240 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1.2 V. Tags: Surface Mount. More details for TSM2309CX can be seen below.