1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Taiwan Semiconductor
  6. TSM250N02DCQ

TSM250N02DCQ

Download Datasheet Request Quote

Note : Your request will be directed to Taiwan Semiconductor.

TSM250N02DCQ Image

The TSM250N02DCQ from Taiwan Semiconductor is a MOSFET with Continous Drain Current 5.8 A, Drain Source Resistance 20 to 55 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.4 to 0.8 V. Tags: Surface Mount. More details for TSM250N02DCQ can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    TSM250N02DCQ
  • Manufacturer
    Taiwan Semiconductor
  • Description
    20 V, 11 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    5.8 A
  • Drain Source Resistance
    20 to 55 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.4 to 0.8 V
  • Gate Charge
    11 nC
  • Power Dissipation
    0.62 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TDFN
  • Applications
    Battery Pack, Load Switch

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products