1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Taiwan Semiconductor
  6. TSM2N60SCW

TSM2N60SCW

Download Datasheet Request Quote

Note : Your request will be directed to Taiwan Semiconductor.

TSM2N60SCW Image

The TSM2N60SCW from Taiwan Semiconductor is a MOSFET with Continous Drain Current 0.6 A, Drain Source Resistance 3600 to 5000 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for TSM2N60SCW can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    TSM2N60SCW
  • Manufacturer
    Taiwan Semiconductor
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.6 A
  • Drain Source Resistance
    3600 to 5000 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    13 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products