The TSM300NB06LDCR from Taiwan Semiconductor is a MOSFET with Continous Drain Current 24 A, Drain Source Resistance 25 to 39 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for TSM300NB06LDCR can be seen below.