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TSM320N03CX

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TSM320N03CX Image

The TSM320N03CX from Taiwan Semiconductor is a MOSFET with Continous Drain Current 5.5 A, Drain Source Resistance 27 to 40 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.4 to 0.9 V. Tags: Surface Mount. More details for TSM320N03CX can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM320N03CX
  • Manufacturer
    Taiwan Semiconductor
  • Description
    30 V, 5.1 to 8.9 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.5 A
  • Drain Source Resistance
    27 to 40 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.4 to 0.9 V
  • Gate Charge
    5.1 to 8.9 nC
  • Power Dissipation
    0.2 to 1.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Battery Power Management, ORing FET/Load Switch

Technical Documents
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