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TSM35N10CP

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TSM35N10CP Image

The TSM35N10CP from Taiwan Semiconductor is a MOSFET with Continous Drain Current 32 A, Drain Source Resistance 30 to 42 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for TSM35N10CP can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM35N10CP
  • Manufacturer
    Taiwan Semiconductor
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    32 A
  • Drain Source Resistance
    30 to 42 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    34 nC
  • Power Dissipation
    1.3 to 83.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252 (D-PAK)

Technical Documents
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